| Dr Theodore Moustakas |
| Research Interests | Current Focus |
| III-nitrides Optical and electronic devices, MEMS |
III-N Quantum Cascade Lasers | |
| Molecular Beam Epitaxy of III Nitrides and other III-Vs |
HVPE growth of AlN substrates | |
| Hydride Vapor Phase Epitaxy of III-nitrides | Visible and UV LEDs | |
| Amorphous Semiconductors Si solar cells, chalcogenide glasses |
Deep UV laser structures | |
| Metallic multi-layers Ceramic/transition metals |
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| Ordering and Phase Separation |
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Dr Moustakas is the principle investigator of the Wide Bangap Semiconductor Laboratory.
This is a state-of-the-art facility
dedicated to studying the growth, fundamental material properties, and fabrication of
novel electronic and opto-electronic devices. The lab specializes in III-nitride growth
by Molecular Beam Epitaxy(MBE) and Hydride Vapor Phase Epitaxy(HVPE). It has a history
in the development of LEDs and currently continues to focus on LEDs and semiconductor
lasers in the blue-UV region of the electromagnetic spectrum.
Pictured above(left) is one of two MBE systems in Dr Moustakas's lab, the Eiko MBE. MBE is a material growth technique that allows near atomic level precision of device dimensions. We currently use MBE for the precision growth of III-nitride devices. Also pictured above(right) is a UV LED being operated by electroluminescence. One of our lab's current projects is to create visible and UV LEDs for solid-state white lighting. For more information, try Dr Moustakas's lab webpage at: http://www.bu.edu/nitrides |