Dr Theodore Moustakas
Invited and Plenary Presentations in Conferences
  1. T.D. Moustakas “Sputtered Hydrogenated Amorphous Silicon”, Presented at the 20th Electronic Materials Conference (University of California at Santa Barbara, June 28, 1978).
  2. T.D. Moustakas “Reactively Sputtered Amorphous Silicon”, Presented at SERI’s Amorphous Silicon Review Meeting (Washington, D.C., April 22, 1980).
  3. T.D. Moustakas “Hydrogenated Amorphous Silicon,” Presented at the 7th Annual Spring Symposium of North Central Chapter of the American Vacuum Society (Detroit, MI, May 8, 1980).
  4. T.D. Moustakas “Charge Transport and Properties of Amorphous Semiconductors,” Gordon Conference on Radiation Chemistry (Brewster Academy, Wolfeboro, N.H., June 28, 1982).
  5. T.D. Moustakas, “Correlation Between Deposition Parameters and Performance of Sputtered Amorphous Silicon Solar Cells,” SPIE Symposium on Photovoltaics for Solar Energy Applications (Arlington, Va., April 6, 1983).
  6. T.D. Moustakas, “High Efficiency Amorphous Silicon Solar Cells Fabricated by Reactive Sputtering,” 165th Electrochemical Society Meeting (San Francisco, May 8, 1983).
  7. T.D. Moustakas, “Progress in Amorphous Silicon Solar Cells Produced by Reactive Sputtering,” 5th European Communities Photovoltaic Solar Energy Conference (Athens, Greece, October 17, 1983).
  8. T.D.Moustakas, “An Overview of Amorphous Silicon Solar Cells,” 166th Electrochemical Society Meeting (New Orleans, October 9, 1984), Ext. Abstr. 84-2, p. 422 (1984).
  9. T.D. Moustakas “Physics of Hydrogenated Amorphous Silicon,”, , IV Taller De Fisica De Superficies (Merida, Mexico, August 18, 1985).
  10. T.D. Moustakas “Synthesis of Polycrystalline Diamond Films by Filament-assisted CVD of Hydrocarbons,” Abstracts (MRS Fall meeting 1987), 379.
  11. T.D. Moustakas “Growth of III-V Compound by MBE,” Symposium on Metalorganic CVD (Florida, February 1987).
  12. T.D. Moustakas “Tungsten Carbine-transition Metal Superlattices: Growth and Characterization,” Symposium on High Temperature Structural Composites (Stevens Institute of Technology, N.J., May 1987).
  13. T.D. Moustakas “Synthesis of Polycrystalline Diamond,” U.S. Government Program Review (North Carolina, July 1987).
  14. T.D. Moustakas “Growth and Doping Studies of Amorphous Silicon Produced by Sputtering” Workshop on Physics and Applications of Amorphous Silicon (Torino, September 1987).
  15. T.D. Moustakas “Synthesis of Polycrystalline Diamond Films by Filament-assisted CVD of Hydrocarbons,” Metal Science Club of New York (April 7, 1988).
  16. T.D. Moustakas “Synthesis of Polycrystalline Diamond Films by Filament-assisted CVD of Hydrocarbons,” 2nd International Seminar on Metal Organic and Plasma Assisted CVD (Florida, February 1988).
  17. T.D. Moustakas “Synthesis and Structure of Diamond Thin Films,” 11th International Symposium on the Reactivity of Solids (Princeton, June 1988).
  18. T.D. Moustakas “Synthesis of Diamond Thin Films,” 2nd International Symposium on the physics and Applications of Amorphous Solids (Torino, Sept. 1988).
  19. T.D. Moustakas “Growth of Diamond Films by Filament-assisted CVD,” Metallurgical Society Meeting on Coatings (Stevens Institute, May 1989).
  20. T.D. Moustakas “Tungsten Carbide-Transition Metal Superlattices,” American Crystallographic Soc. Meeting (Seattle, July 1989).
  21. T.D. Moustakas “Growth Structure and Properties of Hydrogenerated Amorphous Silicon,” Indian Assoc. of Advancement of Science (Calcutta, August 1989).
  22. T.D. Moustakas “Synthesis of Polycrystalline Diamond Films by Filament-assisted CVD of Hydrocarbons,” 1990 N.E. American Vacuum Society Meeting (Burlington, Mass., June 18, 1990).
  23. T.D. Moustakas “Nucleation and Growth of Diamond Thin Films,” 20th International Conference on the Physics of Semiconductors (Thessaloniki, Greece, August 6, 1990).
  24. T.D. Moustakas “ Defect-Induced Nucleation of Diamond Films,” The American Physical Society (Cincinnati, Ohio, March 18, 1991), Bull. of Amer. Phys. Soc. 35, 954 (1991).
  25. T.D. Moustakas “Growth of GaN by ECR-assisted MBE,” 7th Trieste Semiconductor Symposium on Wide-Band-Gap Semiconductors (Trieste, Italy, June 8, 1992).
  26. T.D. Moustakas “Growth of GaN by ECR-assisted MBE,” MRS Symposium on Semiconductor Heterostructures for Photonic and Electronic Applications (Boston, December 1992).
  27. T.D. Moustakas “Growth and Doping of GaN Films by ECR-assisted MBE,” Workshop on Wide Gap Semiconductors (Lawrence Berkley Laboratory, February 19, 1993).
  28. T.D. Moustakas “Growth and Doping of GaN Films by ECR-assisted MBE,” 1993 American Physical Society March Meeting (tutorial) (Seattle, March 21, 1993).
  29. T.D. Moustakas “Potential of III-V Nitrides for Optical and Electronic Applications,” 183rd Meeting of the Electrochemical Society: Symposium on Electronic Materials Technologies for the 21st Century (Honolulu, May 16, 1993), Extended Abstracts 91-3, 955 (1993).
  30. T.D. Moustakas “Growth and Doping of GaN by ECR-assisted MBE,” II-VI Light Emitting Structures Workshop (Philips Labs, November 1993).
  31. T.D. Moustakas “Growth and Properties of GaN Produced by ECR-MBE,” Physics and Chemistry of Semiconductor Interfaces-21 (Mohonk, N.Y., January 1994).
  32. T.D. Moustakas “Growth and Properties of GaN Produced by ECR-MBE,” New England Combined Chapter of the American Vacuum Society (Burlington, Mass., April 1994).
  33. T.D. Moustakas “Growth and Properties of GaN Produced by ECR-MBE,”LEOS Summer Topical Conference on Optoelectronic Materials Growth and Processing (Lake Tahoe, Nevada, July 1994).
  34. T.D. Moustakas “Growth and Properties of GaN Thin Films,” Canadian, American and Mexican Physical Societies Meeting (Cancun, Mexico, September 1994).
  35. T.D. Moustakas “Growth and Properties of GaN Thin Films,” LEOS 7th Annual Meeting (Boston, Mass., October 1994), 2, 25 (1994).
  36. T.D. Moustakas “Growth of GaN Films by Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy,”1995 Spring MRS Meeting (San Francisco, April 1995).
  37. T.D. Moustakas “Growth of III-V Nitrides and Fabrication of Optoelectronic Devices by ECR-assisted MBE,” 6th International Conference on Silicon Carbide and Related Materials (Kyoto, Japan, September 1995).
  38. T.D. Moustakas “Growth and Conductivity Control of GaN by ECR-MBE,” Topical Workshop on III-V Nitrides (Nagoya, Japan, September 1995).
  39. T.D. Moustakas “The Growth of GaN by Molecular Beam Epitaxy (MBE),”6th Regional Conference, ACCG/East-95 (Atlantic City, N.J., October 1995).
  40. T.D. Moustakas “Epitaxial Growth and Properties of GaN by ECR-assisted MBE,” MRS Meeting 1st International Symposium of Gallium Nitride, (Boston, December 1995) Abstracts p.11.
  41. T.D. Moustakas “InGaN Alloys,” 3rd Nitride Workshops (St. Louis, March 13, 1996).
  42. T.D. Moustakas “III-V Nitrides and their Optoelectronic Applications”, Technical Conference on Telecommunications R & D in Massachusetts (University of Massachusetts at Lowell, March 1996).
  43. R.Singh and T.D. Moustakas “Growth of InGaN Films Produced by Electron Cyclotron Resonance MBE,” Electrochemical Society Meeting (Los Angeles, May 1996).
  44. T.D. Moustakas “Growth of III-V Nitrides by MBE,” First European Conference on SiC and Related Materials (Heraklion, Crete, Greece, October 1996)
  45. T.D. Moustakas “III-V Nitrides and their Applications,”N.E Chapter of the American Vacuum Society (Burlington, Mass., December 1996)
  46. T.D. Moustakas “III-V Nitrides, Epitaxial Growth and Applications,” The Electrochemical Society, New England Local Section (Waltham, Mass., February 1997)
  47. T.D. Moustakas “Material Physics Issues of the Wide-gap Nitrides,” American Physical Society (Kansas City, March 1997)
  48. T.D. Moustakas “MBE Growth and Properties of III-V Nitrides,” Symposium at GaN Solid State Devices at Wright Patterson Laboratories (Dayton, Ohio, September1997)
  49. T.D. Moustakas “MBE Growth and p-doping Characteristics of III-V Nitrides,”Second International Conference on Nitride Semiconductors (Tokushima, Japan, October 1997)
  50. T.D. Moustakas “The Role of Basic Research in the 21st Century,” The Science and Technology Seminar Open to the Public by the Venture Business Laboratory (Tokushima, Japan, October 1997)
  51. T.D. Moustakas “Growth and Characterization of GaN-based Light Emitters by ECR-MBE,” Recent Progress in III-V Nitrides-based Short Wavelength Optical Devices and Materials (Tokushima, Japan, November 1997)
  52. T.D. Moustakas “Structure and Optoelectronic Properties of AlGaN and InGaN Alloys,” Materials Research Society (Boston, December 1997)
  53. T.D. Moustakas "Studies of Doping and Alloying Phenomena in Ill-V Nitrides,” 9th Seoul International Symposium on the Physics of Semiconductors and Applications (Seoul, Korea, Nov.1998)
  54. T.D. Moustakas "Phase Separation and long range order in InGaN alloys grown by MBE”, Centennial American Physical Society Meeting (Altanta, March 20, 1999) Bulletin of the American Physical, p.1607.
  55. T.D. Moustakas "Wide Band Gaps Materials Overview”, 26th Annual Symposium of International Microelectronics and Packaging Society (Andover, MA, May 13th 1999).
  56. T.D. Moustakas “Epitaxial Growth and Properties of III-V Nitrides”, Summer School on Advanced Materials for Industrial Application (Kavala, Greece, June 20th – 27th, 1999)
  57. T.D. Moustakas “Opto-electronic Applications of III-V Nitrides”, Materials Physics School, Aristotle University, Thessaloniki Greece (Nov. 12 1999).
  58. H.M.Ng, T.D. Moustakas “Group III Nitride VCSELs structures grown by Molecular Beam Epitaxy”, Symposium - Physics and Simulation of Optoelectronic Devices, SPIE Photonics West Meeting (San Jose, Jan 24 2000).
  59. M. Misra, E. Iliopoulos, D. Doppalapudi, H.M. Ng, T. D. Moustakas “Photoconductive Detectors Fabricated on GaN and AlxGa1-xN Films Grown by Molecular Beam Epitaxy” 6th GaN Workshop Richmond, VA (March 12, 2000)
  60. M .Misra, A. Sampath, and T.D. Moustakas “Vertical Transport in n-GaN Films” 6th GaN Workshop Richmond, VA (March 12, 2000)
  61. T.D. Moustakas “Growth and Device Applications of III-V Nitrides by MBE, 5th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Heraklion, Crete, Greece (May 21, 2000).
  62. T.D. Moustakas “MBE III-V Nitrides”, 11th International Conference on Molecular Beam Epitaxy, Beijing, China (September 10, 2000).
  63. T.D.Moustakas “Ordering in Nitride Alloys”, 2001 Lawrence Symposium on Critical Issues in Epitaxy, Arizona State University (Jan 3, 2001).
  64. T. D.Moustakas, “Group III-Nitride VCSEL structures grown by MBE and Ordering in AlGaN Alloys”, DARPA UV-Emitters Study Group, Arlington VA, (April 8-11, 2001).
  65. T. D. Moustakas “ Growth of Nitrides by MBE”, Army Research Laboratory, Adelphi (May3, 2001)
  66. T.D. Moustakas, “Physics of III-V compounds”, A series of lectures in the Graduate Program “Physics of Materials” of the Aristotle University of Thessaloniki, Greece ( June 1-8, 2001).
  67. T. D. Moustakas, “MBE Growth of Wide-Bandgap Nitrides”, Symposium on Gallium Nitride Based Technologies, Photonics West, San Jose (Jan. 21-22, 2002)
  68. T. D. Moustakas, “A series of lectures on Nitride Semiconductors”, MIT (Spring 2002)
  69. T. D. Moustakas, “Phase Separation and Long Range Atomic Order in Nitride Alloy”, 7th Nitride Workshop, Richmond Virginia (March 11-13, 2002)
  70. Yan Shao, T. C. Chen, Sandeep Iyer ,. N. G. Chu, D. B. Fenner, and T. D. Moustakas, “Growth of GaN by Gas-Cluster-Ion-Beam Deposition (GCIB)”, 7th Nitride Workshop, Richmond Virginia (March 11-13, 2002).
  71. T. D. Moustakas, “ III-Nitrides-Growth and Applications”, Arizona State University (March 25, 2002)
  72. T. D. Moustakas, “VCSEL structures based on III-Nitride Semiconductors”, MIT Microphotonics Center (April 18, 2002)
  73. T.D. Moustakas “Growth of III-Nitrides by MBE”, Centennial Meeting of the Electrochemical Society, Philadelphia, (May 12 –17 2002)
  74. A. Bhattacharyya, I. Friel, J. Cabalu, Sandeep Iyer and T. D. Moustakas, “Ultraviolet Resonant Cavity Light Emitting Diodes grown by Molecular Beam Epitaxy on non-polar Gallium Nitride Substrates” DARPA meeting, Daytona beach, Florida (May 21st, 2002).
  75. E. liopoulos and T. D. Moustakas, “Growth of III-Nitrides by Molecular beam epitaxy”, National Synchrotron light source users meeting, Brookhaven National Labs (May 22nd 2002).
  76. Enrico Bellotti and T.D. Moustakas, “ Design and Fabrication of GaN-based Static Induction Transistor” Symposium on Static Induction Devices (Tokyo, Japan, May. 2002)
  77. T. D. Moustakas, “III-Nitride Semiconductors and their applications to Optical and Electronic Devices” XVIII Panhellenic Symposium on Solid State Physics and Materials Science Heraklion, Crete , Greece (Sept. 15-18 , 2002).
  78. T.D. Moustakas “ Ordering in Ternary Nitride Alloys” 13th International Conference on Ternary and Multinary Compounds, Paris (Oct. 14-18,2002)
  79. T. D. Moustakas “Basic and Applied Research and their Benefits to Society” Presentation upon receiving an Honorary Doctoral Degree from the Aristotle University of Thessaloniki (June 26,2003)
  80. T.D. Moustakas “Physics and Technology of Optoelectronic Materials and Devices” A series of lectures in the Graduate Program “Physics of Materials” of the Aristotle University of Thessaloniki, Greece ( June 23-27, 2003).
  81. T. D. Moustakas “ Optoelectronic Devices based on Nitride Quantum Well Structures” Aristotle University of Thessaloniki, Greece ( June 27, 2003).
  82. T. D. Moustakas “ Wide Band Gap Semiconductors: Photonic and Electronic Applications” International Conference on Electroceramics ( MIT, August 3-7, 2003).
  83. T.D. Moustakas, “ GaN LEDs for Solid State Lighting”, The Electrochemical Society-New England Section (Northeastern University, March 9, 2004).
  84. D.Doppalapudi, R.Milcak, J.Chan, H.L.Tuller, J.Abell, W.Li and T.D. Moustakas, “Sensors based on SiC-AlN MEMS” 206th Electrochemical Society Meeting (Honolulu, Hawaii, October 2004)
  85. T.D. Moustakas, “Growth of InN Films by Cluster Beam Epitaxy and RF plasma-assisted MBE” Indium Nitride Workshop 2, ( Kailua-Kona, Hawaii, January 2005).
  86. T.D. Moustakas, “Nitride UV-LEDs based on flat and “wrinkled” quantum wells, Photonics West 2005 (San Jose, January, 2005).
  87. T. D. Moustakas, “Low-cost Blue/UV LEDs with very high Photon Conversion and Extraction Efficiency for White Lighting” 2005 DOE Solid-State Lighting Program Planning Workshop (San Diego, February 2005).
  88. T. D. Moustakas, “ GaN LEDs for Solid State Lighting”, Saint-Gobain Lighting Community Meeting (Boston June 9, 2005)
  89. T.D. Moustakas, “ MBE and HVPE Growth of III-Nitrides” 16th American Conference on Crystal Growth and Epitaxy (Big Sky, Montana, July 10-15th, 2005).
  90. T. D. Moustakas, J. S. Cabalu, R. Chandrasekaran, S. Riyopoulus “High efficiency LEDs based on textured GaN templates with wrinkled quantum wells”, Optics East ( Boston Nov. 2005).
  91. T.D. Moustakas “Physics of Textured III-Nitride Quantum Wells for Applications to LEDs” International Semiconductor Device Research Symposium (Washington DC, Dec. 7-9, 2005).
  92. T. D. Moustakas, “Low-cost Blue/UV LEDs with very high Photon Conversion and Extraction Efficiency for White Lighting” 2006 DOE Solid-State Lighting Program Planning Workshop (Orlando, February 1-3, 2006).
  93. T. D. Moustakas, “A New Model Describing the Plasma-Assisted MBE Growth of GaN Thin Films and its Alloys with AlN and InN”, International Conference on Metallurgical Coatings and Thin Films, (San Diego May 1-5, 2006).
  94. T. D. Moustakas , "Significant achievements in III-nitride semiconductors research in the last fifteen years" European Workshop on III-Nitride Materials and Devices, (Heraklion, Crete, Greece, Sept. 18-20, 2006).
  95. T. D. Moustakas, “A new model describing the plasma-assisted MBE growth of GaN thin films” International Workshop on Nitride Semiconductors 2006, (Kyoto, Japan, Oct. 22-27, 2006)
  96. T. D. Moustakas, “Nitride Semiconductor LEDs” New England chapter of IEEE LEOS (Lincoln Laboratories, Jan. 11, 2007)
  97. T. D. Moustakas, “GaN R&D at Boston University with emphasis in Solid State Lighting” The 10th Annual Boston University Photonics Center Symposium (June 8th, 2007).
  98. T. D. Moustakas, “Origin of the high photoconductive gain in AlGaN thin films” SPIE Symposium on “Optoelectronic Devices: Physics, Fabrication, and Applications IV” (Optics East, Boston Sept. 9-12, 2007)
  99. T. D. Moustakas, “Progress in III-nitride semiconductors research and the influence of Jacques Pankove’s work in the development of this field” Joint OSA /IEEE-LEOS Denver Seminar Jacques Pankove tribute talk (Boulder, November 8, 2007)
  100. T.D. Moustakas, “Blue-Green LEDs based on III-Nitride quantum wells and quantum dots”, 3rd International Conference on Micro-Nanoelectronics, Nanotechnology and MEMS (Athens, Greece, November 18-21, 2007).
  101. T. D. Moustakas, “GaN-based Light Emitting Diodes for Solid State Lighting”, Massachusetts Hydrogen Coalition (Boston, March 19, 2008).
  102. T. D. Moustakas, “GaN-based Light Emitting Diodes for Solid State Lighting and UV Applications”, Photonics Forum (Boston University, March 24, 2008)
  103. T. D. Moustakas, Materials Issues responsible for the “green gap”, Roundtable Discussions of the Solid State Lighting R&D Task Structure (U. S. Department of Energy, Washington, DC, Sept.17-18, 2008)
  104. T. D. Moustakas, “GaN-based Light Emitting Diodes for Solid State Lighting and UV Applications”, New England Chinese Information and Networking Association (Waltham MA, Dec. 10, 1008)
  105. E. Bellotti, N. Sucena Almeida, A. Moldawer, T. D. Moustakas, S. Chiaria, F. Bertazzi, E. Furno, M.Goano, G. Ghione, “Physics-based design of III-Nitride and ZnO LEDs: from material properties to device optimization”, 17th European Workshop on Heterostructure Technology (HETECH 2008), (Venice, Italy, Nov. 3-5, 2008)
  106. T. D. Moustakas, “Fundamental Issues of UV Materials and Devices”, ARL Workshop on Nitride Semiconductor Optoelectronics for Logistics in Energy, Health and Safety. (Arlington, VA, May 19th, 2009)
  107. T. D. Moustakas “AlGaN Quantum Wells Emitting below 250 nm with Internal Quantum Efficiency as high as 50%” in the 2009 Fall MRS Symposium “III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interaction” (Boston, Nov. 29, Dec.3, 2009)
  108. R. Paiella, K. Driscoll, Y. Li, Y. Liao, A. Bhattacharyya, C. Thomidis, L. Zhou, D. J. Smith, E. Bellotti, and T. D. Moustakas, “Intersubband Device Applications of Nitride Quantum Structures” Photonics West (San Jose CA, Jan 2010)
  109. T. D. Moustakas “Fundamental Issues in Green and UV LEDs” SEMI New England Forum on High Brightness LEDs. ( Teradyne Inc., N. Reading MA, March 10, 2010)
  110. Yitao Liao, Christos Thomidis and Theodore D. Moustakas “Recent Advances of High Efficiency Deep UV-LEDs by plasma-assisted Molecular Beam Epitaxy” ISSLED 2010 (Beijing China May 17, 2010)
  111. David Smith, Lin Zhou and Theodore D. Moustakas, “Structural Characterization of IIINitride Heterostructures: Some Recent Studies” ISSLED 2010 (Beijing China, May 17, 2010)
  112. T. D. Moustakas, C. Thomidis, Y. Liao and C-K Kao, “Nitride based UV Emitters and their Applications” 7th International Conference on Nanoscience and Nanotechnologies (NN10) (Ouranoupolis Halkidiki, Greece, July 11-14, 2010)
  113. R. Paiella, K. Driscoll, Y. Li, Y. Liao, A. Bhattacharyya, C. Thomidis, L. Zhou, D. J. Smith, and T. D. Moustakas, “Intersubband Transitions in GaN-Based Quantum Wells: a New Materials Platform for Infrared Device 40 Applications,” SPIE Optics and Photonics, San Diego (CA), Aug 2010
  114. David J. Smith, Lin Zhou, Martha R. McCartney and T.D. Moustakas “Structural Characterization of III-Nitride Materials and Devices” SPIE Optics and Photonics, San Diego (CA), Aug 2010