Invited and Plenary Presentations in Conferences
- T.D. Moustakas “Sputtered Hydrogenated Amorphous Silicon”, Presented
at the 20th Electronic Materials Conference (University of California at
Santa Barbara, June 28, 1978).
- T.D. Moustakas “Reactively Sputtered Amorphous Silicon”, Presented
at SERI’s Amorphous Silicon Review Meeting (Washington, D.C., April 22,
1980).
- T.D. Moustakas “Hydrogenated Amorphous Silicon,” Presented at the
7th Annual Spring Symposium of North Central Chapter of the American
Vacuum Society (Detroit, MI, May 8, 1980).
- T.D. Moustakas “Charge Transport and Properties of Amorphous
Semiconductors,” Gordon Conference on Radiation Chemistry (Brewster
Academy, Wolfeboro, N.H., June 28, 1982).
- T.D. Moustakas, “Correlation Between Deposition Parameters and
Performance of Sputtered Amorphous Silicon Solar Cells,” SPIE Symposium
on Photovoltaics for Solar Energy Applications (Arlington, Va., April 6,
1983).
- T.D. Moustakas, “High Efficiency Amorphous Silicon Solar Cells
Fabricated by Reactive Sputtering,” 165th Electrochemical Society
Meeting (San Francisco, May 8, 1983).
- T.D. Moustakas, “Progress in Amorphous Silicon Solar Cells Produced
by Reactive Sputtering,” 5th European Communities Photovoltaic Solar
Energy Conference (Athens, Greece, October 17, 1983).
- T.D.Moustakas, “An Overview of Amorphous Silicon Solar Cells,” 166th
Electrochemical Society Meeting (New Orleans, October 9, 1984), Ext.
Abstr. 84-2, p. 422 (1984).
- T.D. Moustakas “Physics of Hydrogenated Amorphous Silicon,”, , IV
Taller De Fisica De Superficies (Merida, Mexico, August 18, 1985).
- T.D. Moustakas “Synthesis of Polycrystalline Diamond Films by
Filament-assisted CVD of Hydrocarbons,” Abstracts (MRS Fall meeting
1987), 379.
- T.D. Moustakas “Growth of III-V Compound by MBE,” Symposium on
Metalorganic CVD (Florida, February 1987).
- T.D. Moustakas “Tungsten Carbine-transition Metal Superlattices:
Growth and Characterization,” Symposium on High Temperature Structural
Composites (Stevens Institute of Technology, N.J., May 1987).
- T.D. Moustakas “Synthesis of Polycrystalline Diamond,” U.S.
Government Program Review (North Carolina, July 1987).
- T.D. Moustakas “Growth and Doping Studies of Amorphous Silicon
Produced by Sputtering” Workshop on Physics and Applications of
Amorphous Silicon (Torino, September 1987).
- T.D. Moustakas “Synthesis of Polycrystalline Diamond Films by
Filament-assisted CVD of Hydrocarbons,” Metal Science Club of New York
(April 7, 1988).
- T.D. Moustakas “Synthesis of Polycrystalline Diamond Films by
Filament-assisted CVD of Hydrocarbons,” 2nd International Seminar on
Metal Organic and Plasma Assisted CVD (Florida, February 1988).
- T.D. Moustakas “Synthesis and Structure of Diamond Thin Films,” 11th
International Symposium on the Reactivity of Solids (Princeton, June
1988).
- T.D. Moustakas “Synthesis of Diamond Thin Films,” 2nd International
Symposium on the physics and Applications of Amorphous Solids (Torino,
Sept. 1988).
- T.D. Moustakas “Growth of Diamond Films by Filament-assisted CVD,”
Metallurgical Society Meeting on Coatings (Stevens Institute, May 1989).
- T.D. Moustakas “Tungsten Carbide-Transition Metal Superlattices,”
American Crystallographic Soc. Meeting (Seattle, July 1989).
- T.D. Moustakas “Growth Structure and Properties of Hydrogenerated
Amorphous Silicon,” Indian Assoc. of Advancement of Science (Calcutta,
August 1989).
- T.D. Moustakas “Synthesis of Polycrystalline Diamond Films by
Filament-assisted CVD of Hydrocarbons,” 1990 N.E. American Vacuum
Society Meeting (Burlington, Mass., June 18, 1990).
- T.D. Moustakas “Nucleation and Growth of Diamond Thin Films,” 20th
International Conference on the Physics of Semiconductors (Thessaloniki,
Greece, August 6, 1990).
- T.D. Moustakas “ Defect-Induced Nucleation of Diamond Films,” The
American Physical Society (Cincinnati, Ohio, March 18, 1991), Bull. of
Amer. Phys. Soc. 35, 954 (1991).
- T.D. Moustakas “Growth of GaN by ECR-assisted MBE,” 7th Trieste
Semiconductor Symposium on Wide-Band-Gap Semiconductors (Trieste, Italy,
June 8, 1992).
- T.D. Moustakas “Growth of GaN by ECR-assisted MBE,” MRS Symposium on
Semiconductor Heterostructures for Photonic and Electronic Applications
(Boston, December 1992).
- T.D. Moustakas “Growth and Doping of GaN Films by ECR-assisted MBE,”
Workshop on Wide Gap Semiconductors (Lawrence Berkley Laboratory,
February 19, 1993).
- T.D. Moustakas “Growth and Doping of GaN Films by ECR-assisted MBE,”
1993 American Physical Society March Meeting (tutorial) (Seattle, March
21, 1993).
- T.D. Moustakas “Potential of III-V Nitrides for Optical and
Electronic Applications,” 183rd Meeting of the Electrochemical Society:
Symposium on Electronic Materials Technologies for the 21st Century
(Honolulu, May 16, 1993), Extended Abstracts 91-3, 955 (1993).
- T.D. Moustakas “Growth and Doping of GaN by ECR-assisted MBE,” II-VI
Light Emitting Structures Workshop (Philips Labs, November 1993).
- T.D. Moustakas “Growth and Properties of GaN Produced by ECR-MBE,”
Physics and Chemistry of Semiconductor Interfaces-21 (Mohonk, N.Y.,
January 1994).
- T.D. Moustakas “Growth and Properties of GaN Produced by ECR-MBE,”
New England Combined Chapter of the American Vacuum Society (Burlington,
Mass., April 1994).
- T.D. Moustakas “Growth and Properties of GaN Produced by
ECR-MBE,”LEOS Summer Topical Conference on Optoelectronic Materials
Growth and Processing (Lake Tahoe, Nevada, July 1994).
- T.D. Moustakas “Growth and Properties of GaN Thin Films,” Canadian,
American and Mexican Physical Societies Meeting (Cancun, Mexico,
September 1994).
- T.D. Moustakas “Growth and Properties of GaN Thin Films,” LEOS 7th
Annual Meeting (Boston, Mass., October 1994), 2, 25 (1994).
- T.D. Moustakas “Growth of GaN Films by Electron Cyclotron Resonance
Plasma-assisted Molecular Beam Epitaxy,”1995 Spring MRS Meeting (San
Francisco, April 1995).
- T.D. Moustakas “Growth of III-V Nitrides and Fabrication of
Optoelectronic Devices by ECR-assisted MBE,” 6th International
Conference on Silicon Carbide and Related Materials (Kyoto, Japan,
September 1995).
- T.D. Moustakas “Growth and Conductivity Control of GaN by ECR-MBE,”
Topical Workshop on III-V Nitrides (Nagoya, Japan, September 1995).
- T.D. Moustakas “The Growth of GaN by Molecular Beam Epitaxy
(MBE),”6th Regional Conference, ACCG/East-95 (Atlantic City, N.J.,
October 1995).
- T.D. Moustakas “Epitaxial Growth and Properties of GaN by
ECR-assisted MBE,” MRS Meeting 1st International Symposium of Gallium
Nitride, (Boston, December 1995) Abstracts p.11.
- T.D. Moustakas “InGaN Alloys,” 3rd Nitride Workshops (St. Louis,
March 13, 1996).
- T.D. Moustakas “III-V Nitrides and their Optoelectronic
Applications”, Technical Conference on Telecommunications R & D in
Massachusetts (University of Massachusetts at Lowell, March 1996).
- R.Singh and T.D. Moustakas “Growth of InGaN Films Produced by
Electron Cyclotron Resonance MBE,” Electrochemical Society Meeting (Los
Angeles, May 1996).
- T.D. Moustakas “Growth of III-V Nitrides by MBE,” First European
Conference on SiC and Related Materials (Heraklion, Crete, Greece,
October 1996)
- T.D. Moustakas “III-V Nitrides and their Applications,”N.E Chapter
of the American Vacuum Society (Burlington, Mass., December 1996)
- T.D. Moustakas “III-V Nitrides, Epitaxial Growth and Applications,”
The Electrochemical Society, New England Local Section (Waltham, Mass.,
February 1997)
- T.D. Moustakas “Material Physics Issues of the Wide-gap Nitrides,”
American Physical Society (Kansas City, March 1997)
- T.D. Moustakas “MBE Growth and Properties of III-V Nitrides,”
Symposium at GaN Solid State Devices at Wright Patterson Laboratories
(Dayton, Ohio, September1997)
- T.D. Moustakas “MBE Growth and p-doping Characteristics of III-V
Nitrides,”Second International Conference on Nitride Semiconductors
(Tokushima, Japan, October 1997)
- T.D. Moustakas “The Role of Basic Research in the 21st Century,” The
Science and Technology Seminar Open to the Public by the Venture
Business Laboratory (Tokushima, Japan, October 1997)
- T.D. Moustakas “Growth and Characterization of GaN-based Light
Emitters by ECR-MBE,” Recent Progress in III-V Nitrides-based Short
Wavelength Optical Devices and Materials (Tokushima, Japan, November
1997)
- T.D. Moustakas “Structure and Optoelectronic Properties of AlGaN and
InGaN Alloys,” Materials Research Society (Boston, December 1997)
- T.D. Moustakas "Studies of Doping and Alloying Phenomena in Ill-V
Nitrides,” 9th Seoul International Symposium on the Physics of
Semiconductors and Applications (Seoul, Korea, Nov.1998)
- T.D. Moustakas "Phase Separation and long range order in InGaN
alloys grown by MBE”, Centennial American Physical Society Meeting
(Altanta, March 20, 1999) Bulletin of the American Physical, p.1607.
- T.D. Moustakas "Wide Band Gaps Materials Overview”, 26th Annual
Symposium of International Microelectronics and Packaging Society
(Andover, MA, May 13th 1999).
- T.D. Moustakas “Epitaxial Growth and Properties of III-V Nitrides”,
Summer School on Advanced Materials for Industrial Application (Kavala,
Greece, June 20th – 27th, 1999)
- T.D. Moustakas “Opto-electronic Applications of III-V Nitrides”,
Materials Physics School, Aristotle University, Thessaloniki Greece
(Nov. 12 1999).
- H.M.Ng, T.D. Moustakas “Group III Nitride VCSELs structures grown by
Molecular Beam Epitaxy”, Symposium - Physics and Simulation of
Optoelectronic Devices, SPIE Photonics West Meeting (San Jose, Jan 24
2000).
- M. Misra, E. Iliopoulos, D. Doppalapudi, H.M. Ng, T. D. Moustakas
“Photoconductive Detectors Fabricated on GaN and AlxGa1-xN Films Grown
by Molecular Beam Epitaxy” 6th GaN Workshop Richmond, VA (March 12,
2000)
- M .Misra, A. Sampath, and T.D. Moustakas “Vertical Transport in
n-GaN Films” 6th GaN Workshop Richmond, VA (March 12, 2000)
- T.D. Moustakas “Growth and Device Applications of III-V Nitrides by
MBE, 5th International Workshop on Expert Evaluation and Control of
Compound Semiconductor Materials and Technologies, Heraklion, Crete,
Greece (May 21, 2000).
- T.D. Moustakas “MBE III-V Nitrides”, 11th International Conference
on Molecular Beam Epitaxy, Beijing, China (September 10, 2000).
- T.D.Moustakas “Ordering in Nitride Alloys”, 2001 Lawrence Symposium
on Critical Issues in Epitaxy, Arizona State University (Jan 3, 2001).
- T. D.Moustakas, “Group III-Nitride VCSEL structures grown by MBE and
Ordering in AlGaN Alloys”, DARPA UV-Emitters Study Group, Arlington VA,
(April 8-11, 2001).
- T. D. Moustakas “ Growth of Nitrides by MBE”, Army Research
Laboratory, Adelphi (May3, 2001)
- T.D. Moustakas, “Physics of III-V compounds”, A series of lectures
in the Graduate Program “Physics of Materials” of the Aristotle
University of Thessaloniki, Greece ( June 1-8, 2001).
- T. D. Moustakas, “MBE Growth of Wide-Bandgap Nitrides”, Symposium on
Gallium Nitride Based Technologies, Photonics West, San Jose (Jan.
21-22, 2002)
- T. D. Moustakas, “A series of lectures on Nitride Semiconductors”,
MIT (Spring 2002)
- T. D. Moustakas, “Phase Separation and Long Range Atomic Order in
Nitride Alloy”, 7th Nitride Workshop, Richmond Virginia (March 11-13,
2002)
- Yan Shao, T. C. Chen, Sandeep Iyer ,. N. G. Chu, D. B. Fenner, and
T. D. Moustakas, “Growth of GaN by Gas-Cluster-Ion-Beam Deposition
(GCIB)”, 7th Nitride Workshop, Richmond Virginia (March 11-13, 2002).
- T. D. Moustakas, “ III-Nitrides-Growth and Applications”, Arizona
State University (March 25, 2002)
- T. D. Moustakas, “VCSEL structures based on III-Nitride
Semiconductors”, MIT Microphotonics Center (April 18, 2002)
- T.D. Moustakas “Growth of III-Nitrides by MBE”, Centennial Meeting
of the Electrochemical Society, Philadelphia, (May 12 –17 2002)
- A. Bhattacharyya, I. Friel, J. Cabalu, Sandeep Iyer and T. D.
Moustakas, “Ultraviolet Resonant Cavity Light Emitting Diodes grown by
Molecular Beam Epitaxy on non-polar Gallium Nitride Substrates” DARPA
meeting, Daytona beach, Florida (May 21st, 2002).
- E. liopoulos and T. D. Moustakas, “Growth of III-Nitrides by
Molecular beam epitaxy”, National Synchrotron light source users
meeting, Brookhaven National Labs (May 22nd 2002).
- Enrico Bellotti and T.D. Moustakas, “ Design and Fabrication of
GaN-based Static Induction Transistor” Symposium on Static Induction
Devices (Tokyo, Japan, May. 2002)
- T. D. Moustakas, “III-Nitride Semiconductors and their applications
to Optical and Electronic Devices” XVIII Panhellenic Symposium on Solid
State Physics and Materials Science Heraklion, Crete , Greece (Sept.
15-18 , 2002).
- T.D. Moustakas “ Ordering in Ternary Nitride Alloys” 13th
International Conference on Ternary and Multinary Compounds, Paris (Oct.
14-18,2002)
- T. D. Moustakas “Basic and Applied Research and their Benefits to
Society” Presentation upon receiving an Honorary Doctoral Degree from
the Aristotle University of Thessaloniki (June 26,2003)
- T.D. Moustakas “Physics and Technology of Optoelectronic Materials
and Devices” A series of lectures in the Graduate Program “Physics of
Materials” of the Aristotle University of Thessaloniki, Greece ( June
23-27, 2003).
- T. D. Moustakas “ Optoelectronic Devices based on Nitride Quantum
Well Structures” Aristotle University of Thessaloniki, Greece ( June 27,
2003).
- T. D. Moustakas “ Wide Band Gap Semiconductors: Photonic and
Electronic Applications” International Conference on Electroceramics (
MIT, August 3-7, 2003).
- T.D. Moustakas, “ GaN LEDs for Solid State Lighting”, The
Electrochemical Society-New England Section (Northeastern University,
March 9, 2004).
- D.Doppalapudi, R.Milcak, J.Chan, H.L.Tuller, J.Abell, W.Li and T.D.
Moustakas, “Sensors based on SiC-AlN MEMS” 206th Electrochemical Society
Meeting (Honolulu, Hawaii, October 2004)
- T.D. Moustakas, “Growth of InN Films by Cluster Beam Epitaxy and RF
plasma-assisted MBE” Indium Nitride Workshop 2, ( Kailua-Kona, Hawaii,
January 2005).
- T.D. Moustakas, “Nitride UV-LEDs based on flat and “wrinkled”
quantum wells, Photonics West 2005 (San Jose, January, 2005).
- T. D. Moustakas, “Low-cost Blue/UV LEDs with very high Photon
Conversion and Extraction Efficiency for White Lighting” 2005 DOE
Solid-State Lighting Program Planning Workshop (San Diego, February
2005).
- T. D. Moustakas, “ GaN LEDs for Solid State Lighting”, Saint-Gobain
Lighting Community Meeting (Boston June 9, 2005)
- T.D. Moustakas, “ MBE and HVPE Growth of III-Nitrides” 16th American
Conference on Crystal Growth and Epitaxy (Big Sky, Montana, July
10-15th, 2005).
- T. D. Moustakas, J. S. Cabalu, R. Chandrasekaran, S. Riyopoulus
“High efficiency LEDs based on textured GaN templates with wrinkled
quantum wells”, Optics East ( Boston Nov. 2005).
- T.D. Moustakas “Physics of Textured III-Nitride Quantum Wells for
Applications to LEDs” International Semiconductor Device Research
Symposium (Washington DC, Dec. 7-9, 2005).
- T. D. Moustakas, “Low-cost Blue/UV LEDs with very high Photon
Conversion and Extraction Efficiency for White Lighting” 2006 DOE
Solid-State Lighting Program Planning Workshop (Orlando, February 1-3,
2006).
- T. D. Moustakas, “A New Model Describing the Plasma-Assisted MBE
Growth of GaN Thin Films and its Alloys with AlN and InN”, International
Conference on Metallurgical Coatings and Thin Films, (San Diego May 1-5,
2006).
- T. D. Moustakas , "Significant achievements in III-nitride
semiconductors research in the last fifteen years" European Workshop on
III-Nitride Materials and Devices, (Heraklion, Crete, Greece, Sept.
18-20, 2006).
- T. D. Moustakas, “A new model describing the plasma-assisted MBE
growth of GaN thin films” International Workshop on Nitride
Semiconductors 2006, (Kyoto, Japan, Oct. 22-27, 2006)
- T. D. Moustakas, “Nitride Semiconductor LEDs” New England chapter of IEEE LEOS (Lincoln Laboratories, Jan. 11, 2007)
- T. D. Moustakas, “GaN R&D at Boston University with emphasis in Solid State Lighting” The 10th Annual Boston University Photonics Center Symposium (June 8th, 2007).
- T. D. Moustakas, “Origin of the high photoconductive gain in AlGaN thin films” SPIE Symposium on “Optoelectronic Devices: Physics, Fabrication, and Applications IV” (Optics East, Boston Sept. 9-12, 2007)
- T. D. Moustakas, “Progress in III-nitride semiconductors research and the influence of Jacques Pankove’s work in the development of this field” Joint OSA /IEEE-LEOS Denver Seminar Jacques Pankove tribute talk (Boulder, November 8, 2007)
- T.D. Moustakas, “ Blue-Green LEDs based on III-Nitride quantum wells and quantum dots”, 3rd International Conference on Micro-Nanoelectronics, Nanotechnology and MEMS (Athens, Greece, November 18-21, 2007)
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