Dr Theodore Moustakas
Patents
  1. T. D. Moustakas, R. Friedman and C. R. Wronski "Gradient Doping in Amorphous Silicon", US. Patent 4,251,289, (February 17, 1981).
  2. T. D. Moustakas "Plasma Etching of Amorphous Silicon", US. Patent 4,285,762, (August 25, 1981).
  3. T. D. Moustakas, D. L. Morel and B. Abeles “Hybrid Method of Making an Amorphous Silicon P-I-N Semiconductor Device", US-Patent 4,407, 710 (November 22, 1983) .
  4. T. D. Moustakas and R. Friedman. "Sputtered P-I-N Amorphous Silicon Semiconductor Device and Method Thereof", US. Patent 4,417,092, (November 22, 1983).
  5. T. D. Moustakas and H.P. Maruska "Method for Sputtering a P-I-N Microcrystalline/ Amorphous Silicon Semiconductor Device with the p- and n-layers sputtered from Boron and Phosphorous Heavily Doped Targets", US. Patent 4,508,609 (April 2, 1985).
  6. T. D. Moustakas and H. P. Maruska "Method for Sputtering a P-I-N Amorphous Silicon Semiconductor Devices Having Partially Crystallized p- and n-layers", US. Patent 4,528,082 (July 9, 1985).
  7. T. D. Moustakas "Control of the Hydrogen Bonding in Reactively Sputtered Amorphous Silicon", US. Patent 4,533,450 (August 6, 1985).
  8. H.P. Maruska, M.C. Hicks and T. D. Moustakas "Optical Detector and Amplifier Based on Tandem Semiconductor Devices", US. Patent 4, 739,383 (1988).
  9. T. D. Moustakas "A Composition of Matter that is Hard and Tough", US. Patent No.4,804,583 (February 14, 1989).
  10. T.D. Moustakas “Improved Retro reflective Sheet Material”, U.S.S.N 08/017, 188 (February 5, 1993)
  11. T. D. Moustakas "Defect-Induced Control of the Structure of Boron Nitride", US. Patent No. 5,296,119 (March22, 1994).
  12. T. D. Moustakas "A Method for the Preparation and Doping of highly insulating monocrystalline Gallium Nitride Thin Films", US. Patent No. 5,385,862 (January 31, 1995).
  13. T.D. Moustakas and R.J. Molnar "Method for Epitaxially Growing Gallium Nitride Layers", US. Patent No. 5,633, 192 (May 27, 1997).
  14. T. D. Moustakas and M. Misra "Photodetectors Using Ill-V Nitrides", US. Patent No.5,677,538 (October 14, 1997)
  15. T. D. Moustakas "Highly Insulating monocrystalline Gallium Nitride Thin Films", US Patent No. 5,686,738 (Nov. 11, 1997).
  16. T. D. Moustakas and R.J. Molnar "Device and Method for Epitaxially Growing Gallium Nitride Layers", US. Patent No.5, 725,674 (March 10, 1998).
  17. T. D. Moustakas “Photodetectors using III-V Nitrides", US. Patent No. 5,847,397 (Dec. 8,1998)
  18. H.M. Ng and T.D. Moustakas “Group III-Nitride VCSELs (Vertical Cavity Surface Emitting Lasers)”, US Provisional Patent Application No. 60\178,236 (filed Jan 26, 2000).
  19. T.D. Moustakas “Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films”, US Patent No. 6,123,768 (Sept. 26, 2000) .
  20. T.D. Moustakas and Mira Misra “ Photodetectors Using III-V Nitrides” Canadian Patent No. 2,226,439 (April 10, 2001).
  21. D. Doppalapudi, T.D. Moustakas, R. Mlcak and H.L. Tuller “Semiconductor Piezoresistor”, US Patent 6,275,137 B1 (August 14, 2001).
  22. D. Doppalapudi, T.D. Moustakas, R. Mlcak and H.L. Tuller “Semiconductor Piezoresistor”, US Patent 6,441,716 (August 27, 2002).
  23. Theodore D. Moustakas, “Method of Making a Semiconductor Device with Exposure of Sapphire Substrate to Activated Nitrogen” U.S. Patent 6,953,703 B2 (Oct. 11, 2005).
  24. Theodore D. Moustakas, "Highly Insulating monocrystalline Gallium Nitride Thin Films", Japanese Patent No. 3817206 (June 16, 2006).
  25. Theodore D. Moustakas, “Semiconductor Device having Group-III Nitride Buffer Layer and Growth Layers”, U.S. Patent No: 7,235,819 (June 26, 2007).
  26. J. Cabalu, E. Bellotti, T.D. Moustakas, C. Eddy, L. Gunter, K. Chu “Design and Fabrication of GaN-based Permeable-Base Transistor” U.S.S/N 60/527,238 (Filed 12/4/2003).
  27. Harry L. Tuller, Theodore D. Moustakas, Yong K. Min , “Method for p-type doping of wide band gap oxide semiconductors” United States Patent Application 20040108505 (June 10, 2004).
  28. Theodore D. Moustakas, Jasper S. Cabalu, “Formation of textured III- Nitride Templates for the Fabrication of Efficient Optical Devices” US Provisional Application No. 60/562,489 (Filed April 15, 2004).
  29. Theodore D. Moustakas, Jasper S. Cabalu, “ Formation of Textured III- Nitride Templates for the Fabrication of Efficient Optical Devices” US Provisional Application No. 60/615,047 ( Filed October 1, 2004)
  30. Theodore D. Moustakas, Jasper S. Cabalu, “Nitride LEDs Based on Flat and “Wrinkled” Quantum Wells” US Provisional Application No. 60/645,704 (Filed January 21, 2005).
  31. Theodore D. Moustakas, Jasper S. Cabalu, “Optical Devices featuring textured semiconductor layers” U. S. Patent Application No. 11/107,150 (Filed April 15th, 2005). Publication No. US-2005-0242364-A1 (Publication Date: 11/03/2005)
  32. Theodore D. Moustakas and Jasper Cabalu, “Optical Devices Featuring Textured Semiconductor Layers”, PCT International Application. No. PCT /US05/012849 (Filed April 15, 2005). International Publication Number WO 2005/104236 A3 (November 3, 2005).
  33. Theodore D. Moustakas and Jasper Cabalu, “Optical Devices Featuring Textured Semiconductor Layers”, US Provisional Patent Application No 60/732,034 (Filed 10/31/2005)
  34. Theodore D. Moustakas and Adrian Williams, “Planarization of GaN by Photoresist Technique using an inductively Coupled Plasma” US Provisional Application No. 60/648,777 (Filed Feb.1, 2005).
  35. Theodore D. Moustakas and Adrian Williams, “Planarization of GaN by Photoresist Technique using an inductively Coupled Plasma” US Provisional Application No. 60/764, 389 (Filed Feb.2, 2006)
  36. Theodore D. Moustakas and Jasper Cabalu, “Optical Devices Featuring Textured Semiconductor Layers” U. S. Patent Application No 11/590,687 (Filed Oct. 31, 2006). Publication No. US-2007-0120141-A1 (Publication Date: 05/31/2007)
  37. Theodore D. Moustakas and Jasper Cabalu, “Optical Devices Featuring Textured Semiconductor Layers” International Application No. PCT/US2006/042483 (Filed Oct. 31, 2006). (International Publication Date 10 May 2007; International Publication Number WO 2007/053624 A2)
  38. Theodore D. Moustakas and Jasper Cabalu, “Optical Devices Featuring Textured Semiconductor Layers” European Patent Application No. 05 744 389.7 (Published on Dec. 27, 2006- Publication number 1735838).
  39. Theodore D. Moustakas and Adrian Williams, “Planarization of GaN by Photoresist Technique using an inductively Coupled Plasma” US Patent Application No. 60/880, 758 (Filed Jan. 17, 2007)
  40. Theodore D. Moustakas and Adrian Williams, “Planarization of GaN by Photoresist Technique using an inductively Coupled Plasma” PCT International Application No. PCT/US2007/002943(Filed Feb. 2, 2007).
  41. Theodore D. Moustakas, "Semiconductor Device Having Highly Insulating monocrystalline Gallium Nitride Thin Films", Japanese Patent Application 2007-24009 (Filed Feb. 2, 2007).
  42. Theodore D. Moustakas, “Semiconductor Device having Group-III Nitride Buffer Layer and Growth Layers”, U.S. Patent Application No. 11/698,737 (Filed 01/26/2007). Publication No. US-2007-0120144-A1 (Publication Date: 05/31/2007)
To see some of the patent plaques, visit the 9th floor of the Photonics Building.