The InGaN ternary system has attracted
a lot of attention as materials for light emitting
devices operating in the red to ultraviolet regions
of the energy spectrum. Our research involves the
study of microstructure and defects in InGaN thin
films grown on lattice matched single crystal substrates.
Another area of interest is the study of phase transformations
occurring in these III-V nitride alloys. Our research
has shown that both phase separation and ordering
occur as competing phenomena over a certain range
of compositions. The effects of these defects and
phase transformations on the opto-electronic properties
of these materials are being studied.
Collaborators
T. D. Moustakas,
Boston University
K.
Ludwig, Boston University
Papers
Please click on any active link to read full pdf versions
of the articles
D. Doppalapudi, E. Iliopolous,
S. N. Basu and T. D. Moustakas, "Epitaxial Growth
of Galliuim Nitride Thin Films on A-Plane Sapphire
by Molecular Beam Epitaxy", Journal of Applied
Physics, 85 (7), 3582 (1999).
D. Doppalapudi, S. N. Basu
and T. D. Moustakas, "Domain Structure in Chemically
Ordered Inx Ga1-x
N Alloys Grown by Molecular Beam Epitaxy",Journal
of Applied Physics, 85 (15), 883 (1999).
S. N. Basu, "Study of Phase Separation and Ordering
in InGaN Alloys", III-V Nitride Materials and
Processes III, edited by T.D. Moustakas, S.E. Mohney
and S.J. Pearton, Vol. 98-18 (1999), p 15.
D. Doppalapudi, K. J. Nam, A. Sampath, Raj Singh,
H. M. Ng, S. N. Basu and T. D. Moustakas, "Threading
Defect Reduction in Laterally Overgrown GaN Films
by Hydride Vapor Phase Epitaxy", III-V Nitride
Materials and Processes III, edited by T.D. Moustakas,
S.E. Mohney and S.J. Pearton, Vol. 98-18 (1999), p
87.
D. Doppalapudi, S. N. Basu,
K. F. Ludwig and T. D. Moustakas, "Phase Separation
and Ordering in InGaN Alloys Grown by Molecular Beam
Epitaxy", Journal of Applied Physics, 84 (3),
1389 (1998).
D. Doppalapudi, E. Iliopoulos, S. N. Basu and T.
D. Moustakas, "Effect of Nitridation and Buffer
in GaN Films Grown on A-Plane (11-20) Sapphire",
Materials Research Society Symposium Proceedings,
482, 51 (1998).
D. Doppalapudi, S. N. Basu and T. D. Moustakas, "Phase
Separation and Ordering in InGaN Alloys", Materials
Research Society Symposium Proceedings, 512, 431 (1998).
S. N. Basu, T. Lei and T. D.
Moustakas, "Microstructures of GaN Films Deposited
on (001) and (111) Si Substrates Using Electron Cyclotron
Resonance Assisted Molecular Beam Epitaxy", J.
Materials Research 9 (9), 2370 (1994).
Funding
BU Photonics Center - A TEM Study of Structure and
Defects in GaN (with T. D. Moustakas).
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